 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA503T P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) The PA503T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. 0.32 -0.05 +0.1 +0.1 PACKAGE DIMENSIONS (in millimeters) +0.1 FEATURES * Two source common MOS FET circuits in package * Complement to PA502T * Automatic mounting supported 2.8 0.2 the same size as SC-59 1.5 0.65 -0.15 0.16 -0.06 0 to 0.1 0.95 0.95 1.9 0.8 1.1 to 1.4 2.9 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse)* PT Tch Tstg RATINGS -50 +16 -100 -200 300 (TOTAL) 150 -55 to +150 UNIT V V mA mA mW C C PIN CONNECTION (Top view) * PW 10 ms, Duty Cycle 50 % Document No. G11239EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 PA503T ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VGS(on) = -4.0 V, RG = 10 VDD = -5.0 V, ID = -10 mA RL = 500 TEST CONDITIONS VDS = -50 V, VGS = 0 VGS = +16 V, VDS = 0 VDS = -5.0 V, ID = -1.0 A VDS = -5.0 V, ID = -10 mA VGS = -4.0 V, ID = -10 mA VGS = -10 V, ID = -10 mA VDS = -5.0 V, VGS = 0, f = 1.0 MHz -1.5 15 60 40 17 9 1 45 75 25 80 100 60 -1.9 MIN. TYP. MAX. -1.0 +10 -2.5 UNIT A A V mS pF pF pF ns ns ns ns Marking: CA SWITCHING TIME MEASUREMENT CIRCUIT AND MEASUREMENT CONDITIONS (RESISTANCE LOADED) VGS DUT RL Gate Voltage Waveform ID td(on) Drain Current Waveform 0 VGS = 1 s Duty cycle 1 % tr td(off) tf 10 % VGS(on) 90 % VDD RG PG. 0 10 % ID 10 % 90 % 90 % 2 PA503T TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 350 Free air PT - Total Power Dissipation - mW 100 dT - Derating factor - % 80 60 40 20 300 250 200 150 100 50 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TO Pe ro ne TA L it un 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 TC - Case Temperature - C TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -120 -100 ID - Drain Current - mA -80 -60 -40 -20 VGS = -4 V Pulsed measurement -10 V -8 V -100 -6 V -10 ID - Drain Current - mA TRANSFER CHARACTERISTICS -1 TA = 150 C 75 C -0.1 25 C -25 C -0.01 VDS = -5.0 V Pulsed measurement -10 -15 0 -2 -4 -6 -8 -10 -12 -14 -0.001 0 -5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -2.4 |yfs| - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 -30 VDS = -5.0 V ID = -1 A 100 50 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = -5.0 V 20 10 5 TA = -25 C 25 C 75 C 150 C 2 1-1 0 30 60 90 120 150 -2 -5 -10 -20 -50 -100 Tch - Channel Temperature - C ID - Drain Current - mA 3 PA503T DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed measurement ID = -1 mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150 VGS = -4 V Pulsed measurement TA = 150 C 100 75 C 25 C 50 -25 C RDS(on) - Drain to Source On-State Resistance - ID = -10 mA 50 RDS(on) - Drain to Source On-State Resistance - 0 -4 -8 -12 -16 -20 0 -1 -2 -5 -10 -20 -50 -100 VGS - Gate to Source Voltage - V ID - Drain Current - mA RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 140 120 100 80 60 40 20 -30 VGS = -4 V ID = -10 mA Pulsed measurement 100 50 Ciss, Coss, Crss - Capacitance - pF 20 10 5 2 1 0.5 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 f = 1 MHz Ciss Coss Crss 0.2 0 30 60 90 120 150 0.1 0.1 -1 -2 -5 -10 -20 -50 -100 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 500 td(on), tr, td(off), tf - Switching Time - ns tr VDD = -5.0 V VGS = -4 V RG = 10 ID - Drain Current - mA 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 200 100 50 10 td(on) tf 20 10 5 -5 td(off) 1 -10 -20 -50 -100 -200 -500 0.1 0.5 0.6 0.7 0.8 0.9 1 ID - Drain Current - mA VSD - Source to Drain Voltage - V 4 PA503T REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 PA503T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
Price & Availability of PA503T
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |